MMBT5087LT1G datasheet(4/7 Pages) ONSEMI

Part #	MMBT5087LT1G

Description	Low Noise Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT5087LT1G

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4

TYPICAL STATIC CHARACTERISTICS

Figure 6. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

1.4

Figure 7. Collector Characteristics

IC, COLLECTOR CURRENT (mA)

1.0

2.0

5.0

10

20

50

1.6

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1.0 V

*

qVC for VCE(sat)

qVB for VBE

0.1

0.2

0.5

Figure 8. “On” Voltages

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0

0.002

TA = 25°C

IC = 1.0 mA

10 mA

100 mA

Figure 9. Temperature Coefficients

50 mA

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

40

60

80

100

20

0

TA = 25°C

PULSE WIDTH = 300

ms

DUTY CYCLE

≤ 2.0%

IB = 400 mA

350

mA

300

mA

250

mA

200

mA

*APPLIES for IC/IB ≤ hFE/2

25

°C to 125°C

-55

°C to 25°C

25

°C to 125°C

-55

°C to 25°C

0.005 0.01 0.02 0.05 0.1 0.2

0.5

1.0 2.0

5.0 10

20

5.0

10

15

20

25

30

35

40

1.2

1.0

0.8

0.6

0.4

0.2

0

2.4

0.8

0

1.6

0.8

1.0

2.0

5.0

10

20

50

100

0.1

0.2

0.5

150

mA

100

mA

50

mA

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