MMBT6517LT3G datasheet(2/5 Pages) ONSEMI

Part #	MMBT6517LT3G

Description	High Voltage Transistor

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MMBT6517LT1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 1.0 mA)

V(BR)CEO

350

−

V

Collector−Base Breakdown Voltage

(IC = 100 mA)

V(BR)CBO

350

−

V

Emitter−Base Breakdown Voltage

(IE = 10 mA)

V(BR)EBO

6.0

−

V

Collector Cutoff Current

(VCB = 250 V)

ICBO

−

50

nA

Emitter Cutoff Current

(VEB = 5.0 V)

IEBO

−

50

nA

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 mA, VCE = 10 V)

(IC = 10 mA, VCE = 10 V)

(IC = 30 mA, VCE = 10 V)

(IC = 50 mA, VCE = 10 V)

(IC = 100 mA, VCE = 10 V)

hFE

20

30

20

15

−

200

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 10 mA, IB = 1.0 mA)

(IC = 20 mA, IB = 2.0 mA)

(IC = 30 mA, IB = 3.0 mA)

(IC = 50 mA, IB = 5.0 mA)

VCE(sat)

−

0.30

0.35

0.50

1.0

V

Base −Emitter Saturation Voltage

(IC = 10 mA, IB = 1.0 mA)

(IC = 20 mA, IB = 2.0 mA)

(IC = 30 mA, IB = 3.0 mA)

VBE(sat)

−

0.75

0.85

0.90

V

Base −Emitter On Voltage

(IC = 100 mA, VCE = 10 V)

VBE(on)

−

2.0

V

SMALL−SIGNAL CHARACTERISTICS

Current Gain − Bandwidth Product

(IC = 10 mA, VCE = 20 V, f = 20 MHz)

fT

40

200

MHz

Collector−Base Capacitance

(VCB = 20 V, f = 1.0 MHz)

Ccb

−

6.0

pF

Emitter−Base Capacitance

(VEB = 0.5 V, f = 1.0 MHz)

Ceb

−

80

pF

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

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