MPS4250G datasheet(2/3 Pages) ONSEMI

Part #	MPS4250G

Description	PNP Silicon Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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MPS4250

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −5.0 mA)

V(BR)CES

−40

−

Vdc

Collector−Emitter Sustaining Voltage (Note 1)

(IC = −5.0)

V(BR)CEO(sus)

−40

−

Vdc

Collector−Base Breakdown Voltage

(IC = −10 mA)

V(BR)CBO

−40

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mA)

V(BR)EBO

−5.0

−

Vdc

Collector Cutoff Current

(VCB = −50 V)

(VCB = −40 V, TA = 65°C)

ICBO

−

−10

−3.0

nA

mA

Emitter Cutoff Current

(VEB = −3.0 V)

IEBO

−

−20

nA

ON CHARACTERISTICS

DC Current Gain

(IC = −1.0 mA, VCE = −5.0 V)

(IC = −10 mA, VCE = −5.0 V)

hFE

250

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = −10 mA, IB = −0.5 mA)

VCE(sat)

−

−0.25

Vdc

Base −Emitter Saturation Voltage (Note 1)

(IC = −10 mA, IB = −0.5 mA)

VBE(sat)

−

−0.9

Vdc

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = −5.0 V, f = 1.0 MHz)

Cobo

−

6.0

pF

Input Capacitance

(VEB = −0.5 V, f = 1.0 MHz)

Cibo

−

16

pF

Small−Signal Current Gain

(IC = −1.0 mA, VCE = −5.0 V, f = 1.0 kHz)

(IC = −0.5 mA, VCE = −5.0 V, f = 20 MHz)

hfe

250

2.0

800

−

Noise Figure

(IC = −20 mA, VCE = −5.0 V, RS = 10 kW, f = 1.0 kHz, PBW = 150 Hz)

(IC = −250 mA, VCE = −5.0 V, RS = 1.0 kW, f = 1.0 kHz, PBW = 150 Hz)

NF

−

2.0

dB

1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%.

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