MPSA92 datasheet(2/5 Pages) ONSEMI

Part #	MPSA92

Description	High Voltage Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MPSA92, MPSA93

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = −1.0 mAdc, IB = 0)

MPSA92

MPSA93

V(BR)CEO

−300

−200

−

Vdc

Collector−Base Breakdown Voltage

(IC = −100 mAdc, IE = 0)

MPSA92

MPSA93

V(BR)CBO

−300

−200

−

Vdc

Emitter−Base Breakdown Voltage

(IE = −100 mAdc, IC = 0)

V(BR)EBO

−5.0

−

Vdc

Collector Cutoff Current

(VCB = −200 Vdc, IE = 0)

MPSA92

(VCB = −160 Vdc, IE = 0)

MPSA93

ICBO

−

−0.25

mAdc

Emitter Cutoff Current

(VEB = −3.0 Vdc, IC = 0)

IEBO

−

−0.1

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = −1.0 mAdc, VCE = −10 Vdc)

All Types

(IC = −10 mAdc, VCE = −10 Vdc)

All Types

(IC = −30 mAdc, VCE = −10 Vdc)

MPSA92

MPSA93

hFE

25

40

25

−

Collector−Emitter Saturation Voltage

(IC = −20 mAdc, IB = −2.0 mAdc)

MPSA92

MPSA93

VCE(sat)

−

−0.5

−0.4

Vdc

Base−Emitter Saturation Voltage

(IC = −20 mAdc, IB = −2.0 mAdc)

VBE(sat)

−

−0.9

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)

fT

50

−

MHz

Collector−Base Capacitance

(VCB = −20 Vdc, IE = 0, f = 1.0 MHz)

MPSA92

MPSA93

Ccb

−

6.0

8.0

pF

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

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