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MPSW51RLRAG Datasheet(PDF) 1 Page - ON Semiconductor |
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MPSW51RLRAG Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 4 1 Publication Order Number: MPSW51/D MPSW51, MPSW51A One Watt High Current Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MPSW51 MPSW51A VCEO −30 −40 Vdc Collector−Base Voltage MPSW51 MPSW51A VCBO −40 −50 Vdc Emitter−Base Voltage VEBO −5.0 Vdc Collector Current − Continuous IC −1000 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 W mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W Thermal Resistance, Junction−to−Case RqJC 50 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION MARKING DIAGRAM MPS W51x AYWW G G x = 51A Devices A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 1 2 BENT LEAD TAPE & REEL AMMO PACK STRAIGHT LEAD BULK PACK 3 TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 |
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