Electronic Components Datasheet Search |
|
MUN2211T1G Datasheet(PDF) 1 Page - ON Semiconductor |
|
MUN2211T1G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 18 page © Semiconductor Components Industries, LLC, 2007 July, 2007 - Rev. 13 1 Publication Order Number: MUN2211T1/D MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications. Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Moisture Sensitivity Level: 1 • ESD Rating - Human Body Model: Class 1 - Machine Model: Class B • The SC-59 Package can be Soldered Using Wave or Reflow • The Modified Gull-Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die • Pb-Free Packages are Available MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector‐Base Voltage VCBO 50 Vdc Collector‐Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25 °C PD 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) mW °C/W Thermal Resistance, Junction‐to‐Ambient RqJA 540 (Note 1) 370 (Note 2) °C/W Thermal Resistance, Junction‐to‐Lead RqJL 264 (Note 1) 287 (Note 2) °C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad. 2. FR-4 @ 1.0 x 1.0 inch Pad. SC-59 CASE 318D STYLE 1 Preferred devices are recommended choices for future use and best overall value. NPN SILICON BIAS RESISTOR TRANSISTORS 3 1 2 PIN 3 COLLECTOR (OUTPUT) PIN 1 EMITTER (GROUND) PIN 2 BASE (INPUT) R1 R2 MARKING DIAGRAM DEVICE MARKING INFORMATION See specific marking information in the Device Marking and Resistor Values table on page 2 of this data sheet. http://onsemi.com See detailed ordering and shipping information in the table on page 2 of this data sheet. ORDERING INFORMATION 8x = Device Code (Refer to page 2) M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) 8xM G G *Date Code orientation may vary depending upon manufacturing location. 1 |
Similar Part No. - MUN2211T1G |
|
Similar Description - MUN2211T1G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |