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CY8C20234 Datasheet(PDF) 10 Page - Cypress Semiconductor |
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CY8C20234 Datasheet(HTML) 10 Page - Cypress Semiconductor |
10 / 30 page CY8C20234 Document Number: 001-54650 Rev. *E Page 10 of 30 Absolute Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Operating Temperature Table 3. Absolute Maximum Ratings Symbol Description Min Typ Max Units Notes TSTG Storage temperature -55 25 +100 °C Higher storage temperatures reduce data retention time. Recommended storage temperature is +25 °C ± 25 °C. Time spent in storage at a temperature greater than 65 °C counts toward the FlashDR electrical specification in Table 10 on page 13. TBAKETEMP Bake temperature – 125 See package label °C tBAKETIME Bake time See package label – 72 Hours TA Ambient temperature with power applied –40 – +85 °C VDD Supply voltage on VDD relative to VSS –0.5 – +6.0 V VIO DC input voltage VSS – 0.5 – VDD + 0.5 V VIOZ DC voltage applied to tri-state VSS – 0.5 – VDD + 0.5 V IMIO Maximum current into any port pin –25 – +50 mA ESD Electrostatic discharge voltage 2000 – – V Human Body Model ESD. LU Latch-up current – – 200 mA Table 4. Operating Temperature Symbol Description Min Typ Max Units Notes TA Ambient temperature –40 – +85 °C TJ Junction temperature –40 – +100 °C The temperature rise from ambient to junction is package specific. See Table 19 on page 18. The user must limit the power consumption to comply with this requirement. [+] Feedback |
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