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CY14B101LA Datasheet(PDF) 10 Page - Cypress Semiconductor

Part # CY14B101LA
Description  1 Mbit (128K x 8/64K x 16) nvSRAM
Download  28 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY14B101LA Datasheet(HTML) 10 Page - Cypress Semiconductor

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CY14B101LA
CY14B101NA
Document #: 001-42879 Rev. *L
Page 10 of 28
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65
C to +150 C
Maximum accumulated storage time:
At 150
C ambient temperature ...................... 1000 h
At 85
C ambient temperature .................... 20 Years
Ambient temperature
with power applied .................................. –55
C to + 150 C
Supply voltage on VCC relative to VSS ...........–0.5 V to 4.1 V
Voltage applied to outputs
in High Z state .................................... –0.5 V to VCC + 0.5 V
Input voltage ....................................... –0.5 V to VCC + 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to VCC + 2.0 V
Package power dissipation
capability (TA = 25 °C) ................................................. 1.0 W
Surface mount Pb soldering
temperature (3 Seconds) ......................................... +260
C
DC output current (1 output at a time, 1s duration) .... 15 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) ......................... > 2001 V
Latch up current .................................................... > 200 mA
Operating Range
Range
Ambient Temperature
VCC
Industrial
–40
C to +85 C
2.7 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range (VCC = 2.7 V to 3.6 V)
Parameter
Description
Test Conditions
Min
Typ [19]
Max
Unit
VCC
Power supply voltage
2.7
3.0
3.6
V
ICC1
Average VCC current
tRC = 20 ns
tRC = 25 ns
tRC = 45 ns
Values obtained without output loads
(IOUT = 0 mA)
––
70
70
52
mA
mA
mA
ICC2
Average VCC current during STORE All inputs don’t care, VCC = Max
Average current for duration tSTORE
––
10
mA
ICC3
Average VCC current at
tRC = 200 ns, VCC(Typ), 25 °C
All inputs cycling at CMOS levels.
Values obtained without output loads
(IOUT = 0 mA)
–35–
mA
ICC4
Average VCAP current during
AutoStore cycle
All inputs don’t care. Average current for
duration tSTORE
––5
mA
ISB
VCC standby current
CE > (VCC – 0.2 V).
VIN < 0.2 V or > (VCC – 0.2 V).
Standby current level after nonvolatile cycle
is complete.
Inputs are static. f = 0 MHz
––5
mA
IIX[20]
Input leakage current (except HSB)VCC = Max, VSS < VIN < VCC
–1
+1
µA
Input leakage current (for HSB)VCC = Max, VSS < VIN < VCC
–100
+1
µA
IOZ
Off-state output leakage current
VCC = Max, VSS < VOUT < VCC,
CE or OE > VIH or BHE/BLE > VIH or WE < VIL
–1
+1
µA
VIH
Input HIGH voltage
2.0
VCC + 0.5
V
VIL
Input LOW voltage
VSS – 0.5
0.8
V
VOH
Output HIGH voltage
IOUT = –2 mA
2.4
V
VOL
Output LOW voltage
IOUT = 4 mA
0.4
V
VCAP[21]
Storage capacitor
Between VCAP pin and VSS, 5 V rated
61
68
180
µF
Notes
19. Typical values are at 25 °C, VCC = VCC(Typ). Not 100% tested.
20. The HSB pin has IOUT = -2 µA for VOH of 2.4 V when both active high and low drivers are disabled. When they are enabled standard VOH and VOL are valid. This
parameter is characterized but not tested.
21. Min VCAP value guarantees that there is a sufficient charge available to complete a successful AutoStore operation. Max VCAP value guarantees that the capacitor on
VCAP is charged to a minimum voltage during a Power-Up RECALL cycle so that an immediate power-down cycle can complete a successful AutoStore. Therefore it
is always recommended to use a capacitor within the specified min and max limits. Refer application note AN43593 for more details on VCAP options.
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