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BDV64B Datasheet(PDF) 1 Page - ON Semiconductor |
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BDV64B Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 13 1 Publication Order Number: BDV65B/D BDV65B(NPN), BDV64B(PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain − HFE = 1000 (min.) @ 5 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistors • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Max Unit Collector−Emitter Voltage VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 10 20 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 125 1.0 W W/_C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.0 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOT−93 (TO−218) CASE 340D 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100−120 VOLTS, 125 WATTS MARKING DIAGRAM http://onsemi.com AYWW BDV6xBG A = Assembly Location Y = Year WW = Work Week G= Pb−Free Package BDV6xB = Device Code x = 4 or 5 Device Package Shipping ORDERING INFORMATION BDV65B SOT−93 30 Units / Rail BDV65BG SOT−93 (Pb−Free) 30 Units / Rail BDV64B SOT−93 30 Units / Rail BDV64BG SOT−93 (Pb−Free) 30 Units / Rail COLLECTOR 2,4 BASE 1 EMITTER 3 COLLECTOR 2 BASE 1 EMITTER 3 NPN PNP BDV65B BDV64B 3 2 1 |
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