MJ802_06 datasheet(2/4 Pages) ONSEMI

Part #	MJ802

Description	High?뭁ower NPN Silicon Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MJ802

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 200 mAdc, RBE = 100 W)

BVCER

100

−

Vdc

Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc)

VCEO(sus)

90

−

Vdc

Collector−Base Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCB = 100 Vdc, IE = 0, TC = 150_C)

ICBO

−

1.0

5.0

mAdc

Emitter−Base Cutoff Current

(VBE = 4.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

ON CHARACTERISTICS(1)

DC Current Gain (Note 1)

(IC = 7.5 Adc, VCE = 2.0 Vdc)

hFE

25

100

−

Base−Emitter “On” Voltage

(IC = 7.5 Adc, VCE = 2.0 Vdc)

VBE(on)

−

1.3

Vdc

Collector−Emitter Saturation Voltage

(IC = 7.5 Adc, IB = 0.75 Adc)

VCE(sat)

−

0.8

Vdc

Base−Emitter Saturation Voltage

(IC = 7.5 Adc, IB = 0.75 Adc)

VBE(sat)

−

1.3

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

2.0

−

MHz

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

200

150

100

50

0

40

60

120

140

200

Figure 1. Power−Temperature Derating Curve

TC, CASE TEMPERATURE (°C)

0

20

80

100

160

180

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