DN0150ALP4 / DN0150BLP4

Document number: DS31492 Rev. 4 - 2

2 of 5

www.diodes.com

January 2011

© Diodes Incorporated

DN0150ALP4 / DN0150BLP4

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

60

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

5

V

Collector Current – Continuous

100

mA

Peak Pulse Collector Current

200

mA

Base Current

30

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

450

mW

Thermal Resistance, Junction to Ambient (Note 4)

278

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

60

—

—

V

Collector-Emitter Breakdown Voltage (Note 5)

50

—

—

V

Emitter-Base Breakdown Voltage

5

—

—

V

Collector Cut-Off Current

—

—

0.1

μA

Emitter Cut-Off Current

—

—

0.1

μA

ON CHARACTERISTICS (Note 5)

Collector-Emitter Saturation Voltage

—

0.10

0.25

V

DC Current Gain

DN0150ALP4

DN0150BLP4

120

—

240

—

200

—

400

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

60

—

—

MHz

f = 30MHz

Output Capactiance

—

1.3

—

pF

f = 1MHz

Notes:

4. Device mounted on FR-4 PCB with minimum recommended pad layout.

5. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle

≤2%