ZXGD3006E6

6 of 8

www.diodes.com

June 2011

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ZXGD3006E6

0

100 200 300 400 500 600 700 800

0

5

10

15

V

V

V

R

C

R

R

SOURCE

R

SINK

V

OUT

Symmetric Source and Sink Resistors

Time (ns)

V

IN

0.0

0.2

0.4

0.6

0.8

1.0

1.2

-20

-15

-10

-5

0

5

10

15

20

V

V

V

R

C

R

R

SOURCE

R

SINK

Asymmetric Source and Sink Resistors

V

IN

V

OUT

Circuit Examples

ZXGD3006 driving a MOSFET

Application example of the ZXGD3006 driving the gate of a

Switching Time Characteristic

ZXGD3006 driving an IGBT

Application example of ZXGD3006 driving the gate of an IGBT with

addition, the gate is driven negative to -18V to prevent dV/dt induced

false triggering.

Switching Time Characteristic