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2011.03 - Rev.A

Medium power transistor (60V, 2A)

2SC5866



Features



Dimensions (Unit : mm)

2) Low saturation voltage, typically

3) Strong discharge power for inductive load and

capacitance load.

4) Complements the 2SA2094



Applications

Low frequency amplifier

High speed switching



Structure

NPN Silicon epitaxial planar transistor



Packaging specifications

Taping

2SC5866

Type

TL

3000

Package

Basic ordering unit

(pieces)

Code



Absolute maximum ratings (Ta=25

C)

Parameter

V

V

V

A

mW

∗1 Pw=10ms

∗2 Each terminal mounted on a recommended land.

∗2

∗1

°C

A

°C

Tj

Tstg

Symbol

60

60

6

2

4

500

150

−55 to +150

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

Each lead has same dimensions

Abbreviated symbol : VL

TSMT3

2.8

1.6

0.3

0.6

(1)Base

(2)Emitter

(3)Collector