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MRFE6VP6300HR3 Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc |
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MRFE6VP6300HR3 Datasheet(HTML) 5 Page - Freescale Semiconductor, Inc |
5 / 14 page MRFE6VP6300HR3 MRFE6VP6300HSR3 5 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — PULSED 50 1 1000 020 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain--Source Voltage 30 Ciss 100 10 40 Coss Measured with ±30 mV(rms)ac @ 1 MHz VGS =0 Vdc Note: Each side of device measured separately. 0.1 53 60 26 Pin, INPUT POWER (dBm) PULSED Figure 5. Pulsed Output Power versus Input Power 58 27 28 29 30 31 32 33 57 54 Actual Ideal VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle P1dB = 55.4 dBm (344 W) 56 55 59 34 P3dB = 56.0 dBm (398 W) P2dB = 55.8 dBm (380 W) ηD Gps VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 29 20 20 90 100 26 70 50 30 Pout, OUTPUT POWER (WATTS) PULSED Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power 24 22 600 23 28 40 60 80 25 27 19 26 0 23 22 Pout, OUTPUT POWER (WATTS) PULSED Figure 7. Pulsed Power Gain versus Output Power 50 21 350 400 VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 20 100 200 250 300 VDD =30 V 50 V 24 25 28 27 29 150 35 V 40 V 45 V 20 90 0 Pout, OUTPUT POWER (WATTS) PULSED Figure 8. Pulsed Drain Efficiency versus Output Power 70 50 100 150 200 250 300 350 60 30 50 40 80 400 Figure 9. Pulsed Power Gain and Drain Efficiency versus Output Power Pout, OUTPUT POWER (WATTS) PULSED 21 10 24 23 100 600 ηD 25_C TC =--30_C 85_C Gps VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle 40 60 50 10 30 20 --30_C 25_C 85_C VDD =50 Vdc,IDQ = 100 mA, f = 230 MHz Pulse Width = 100 μsec, 20% Duty Cycle VDD =30 V 50 V 35 V 40 V 45 V 22 27 26 25 29 28 70 80 90 Crss |
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