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SPA11N60CFD Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # SPA11N60CFD
Description  CoolMOS Power Transistor
Download  12 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPA11N60CFD Datasheet(HTML) 1 Page - Infineon Technologies AG

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SPA11N60CFD
CoolMOS
TM Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified for industrial grade applications according to JEDEC
0)
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
1)
I D
T C=25 °C
A
T C=100 °C
Pulsed drain current
2)
I D,pulse
T C=25 °C
Avalanche energy, single pulse
E AS
I D=5.5 A, V DD=50 V
340
mJ
Avalanche energy, repetitive
2),3)
E AR
I D=11 A, V DD=50 V
Avalanche current, repetitive
2),3)
I AR
A
Drain source voltage slope
dv /dt
I D=11 A, V DS=480 V,
T j=125 °C
V/ns
Reverse diode dv /dt
dv /dt
V/ns
Maximum diode commutation speed
di /dt
A/µs
Gate source voltage
V GS
static
V
AC (f >1 Hz)
Power dissipation
P tot
T C=25 °C
W
Operating and storage temperature
T j, T stg
°C
600
11
80
I S=11 A, V DS=480 V,
T j=125 °C
±20
±30
33
-55 ... 150
0.6
40
Value
11
7
28
V DS
600
V
R DS(on),max
0.44
"
I D
1)
11
A
Product Summary
Type
Package
Ordering Code
Marking
SPA11N60CFD
TO-220-3-31
SP000216317
11N60CFD
PG-TO220-3-31
Rev. 1.4
page 1
2010-12-21


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