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SPW52N50C3 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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SPW52N50C3 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 12 page 200 8-02-11 Rev. 2. 6 Page 4 SPW52N50C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 52 A Inverse diode direct current, pulsed ISM - - 156 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=380V, IF=IS , diF/dt=100A/μs - 580 - ns Reverse recovery charge Qrr - 20 - μC Peak reverse recovery current Irrm - 70 - A Peak rate of fall of reverse recovery current dirr/dt - 900 - A/μs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance Rth1 0.002689 K/W Rth2 0.005407 Rth3 0.011 Rth4 0.054 Rth5 0.071 Rth6 0.036 Thermal capacitance Cth1 0.001081 Ws/K Cth2 0.004021 Cth3 0.005415 Cth4 0.014 Cth5 0.025 Cth6 0.158 E xternal H eatsink Tj Tcase Tam b C th1 C th2 R th1 R th,n C th,n P tot (t) Please note the new package dimensions arccording to PCN 2009-134-A |
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