QS5U28

Transistor

Rev.A

1/4

2.5V Drive Pch+SBD MOS FET

QS5U28

Structure

External dimensions (Unit : mm)

Silicon P-channel MOS FET

Each lead has same dimensions

TSMT5

0~0.1

0.16

0.85

1.0MAX

0.7

(1)

(3)

(2)

(4)

(5)

0.4

1.9

2.9

0.95

0.95

Abbreviated symbol : U28

Schottky Barrier DIODE

Features

1) The QS5U28 combines Pch MOS FET with

a Schottky barrier diode in TSMT5 package.

2) Low on-state resistance with fast switching.

3) Low voltage drive (2.5V).

4) Built-in schottky barrier diode has low forward voltage.

Applications

Load switch, DC/DC conversion

Packaging specifications

Equivalent circuit

QS5U28

TR

3000

Type

Package

Code

Taping

Basic ordering unit (pieces)

(1)Gate

(2)Source

(3)Anode

(4)Cathode

(5)Drain

∗2

∗1

(1)

(2)

(3)

(5)

(4)

∗ A protection diode has been buitt in between the gate and

the source to protect against static electricity when the product

is in use. Use the protection circuit when rated voltages are exceeded.

∗1 ESD protection diode

∗2 Body diode