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QS5U28 Datasheet(PDF) 1 Page - Rohm |
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QS5U28 Datasheet(HTML) 1 Page - Rohm |
1 / 5 page QS5U28 Transistor Rev.A 1/4 2.5V Drive Pch+SBD MOS FET QS5U28 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET Each lead has same dimensions TSMT5 0~0.1 0.16 0.85 1.0MAX 0.7 (1) (3) (2) (4) (5) 0.4 1.9 2.9 0.95 0.95 Abbreviated symbol : U28 Schottky Barrier DIODE Features 1) The QS5U28 combines Pch MOS FET with a Schottky barrier diode in TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. Applications Load switch, DC/DC conversion Packaging specifications Equivalent circuit QS5U28 TR 3000 Type Package Code Taping Basic ordering unit (pieces) (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain ∗2 ∗1 (1) (2) (3) (5) (4) ∗ A protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. ∗1 ESD protection diode ∗2 Body diode |
Similar Part No. - QS5U28_06 |
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Similar Description - QS5U28_06 |
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