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RB050L-60 Datasheet(PDF) 1 Page - Rohm |
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RB050L-60 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky barrier diode RB050L-60 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification Features 1)Small power mold type. (PMDS) 2)Low IR 3)High reliability Structure Construction Silicon epitaxial planar Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Symbol Unit VRM V VR V Io A Io A IFSM A Tj °C Tstg °C (*2) On the Glass epoxy substrate, half sine wave at 180° Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions VF1 - - 0.52 V IF=2.0A VF2 - - 0.56 V IF=3.0A Reverse current IR - - 100 A VR=60V Parameter Forward voltage Parameter Limits Reverse voltage (repetitive) 60 (*1) On the Glass epoxy substrate, half sine wave at 180° Tc=69°C MAX Storage temperature 40 to 150 Forward current surge peak (60Hz・1cyc) Reverse voltage (DC) 60 70 Junction temperature 150 Average rectified forward current (*1) 3 Average rectified forward current (*2) 2 ROHM : PMDS JEDEC : SOD-106 ① ② 3 4 0.1±0.02 0.1 2.6±0.2 2.0±0.2 1.5±0.2 Manufacture Date PMDS 2.0 4.0±0.1 2.9±0.1 4.0±0.1 2.0±0.05 φ1.55±0.05 φ1.55 0.3 2.8MAX 1/3 2011.04 - Rev.A |
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