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RB215T-90 Datasheet(PDF) 1 Page - Rohm |
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RB215T-90 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky barrier diode RB215T-90 Applications Dimensions (Unit : mm) Structure General rectification (Common cathode dual chip) Features 1) Small power mold type.(PMDU) 2) Low IR 3) High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25 C) Symbol Unit VRM V VR V Io A IFSM A Tj C Tstg C Electrical characteristic (Ta=25 C) Symbol Min. Typ. Max. Unit Forward voltage VF - - 0.75 V IF=10A IR - - 400 μA VR=90V Thermal impedance jc - - 1.75 C/W junction to case Conditions (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=110 C Parameter 100 Junction temperature 150 Storage temperature 40 to 150 Reverse current Parameter Limits Reverse voltage (repetitive) 90 Reverse voltage (DC) 90 Average rectified forward current(*1) 20 Forward current surge peak (60Hz/1cyc) (*1) (1) (2) (3) 1.2 1.3 0.8 (1) (2) (3) 10.0±0.3 0.1 2.8±0.2 0.1 4.5±0.3 0.1 0.7±0.1 0.05 2.6±0.5 ① ROHM : TO220FN ① Manufacture Date 1/3 2011.04 - Rev.D |
Similar Part No. - RB215T-90_11 |
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Similar Description - RB215T-90_11 |
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