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2010.06 - Rev.A

Phototransistor, top view type

RPT-34PB3F

The RPT-34PB3F is a silicon planar phototransistor.

It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.



Applications



Dimensions (Units : mm)

Optical control equipment



Features

High sensitivity.



Absolute maximum ratings (Ta = 25

C)

Parameter

Symbol

Topr

Tstg

Limits

−25~+85

−30~+85

32

5

30

150

Unit

V

V

mA

mW

°C

°C

Collector-emitter voltage

Emitter-collector voltage

Collector current

Collector power dissipation

Operating temperature

Storage temperature



Electrical and optical characteristics (Ta = 25

C)

Parameter

Symbol

Min.

2.0

−

−

−

−

−

Typ.

−

−

800

−

±36

10

Max.

−

0.5

−

0.4

−

−

Unit

mA

=10V(Black box)

−

−

μA

nm

V

deg

μs

Conditions

Light current

Dark current

Peak sensitivity wavelength

Collector-emitter saturation voltage

Half-angle

Response time

2

−0.6

2

−0.5

(2.5)

φ3.1±0.2

φ3.8±0.3

φ3.5

Emitter

Collector

1

1

2

2

Internal connection diagram

Notes :

1. Unspecfied tolerance

shall be

±0.2.

2. Dimension in parenthesis

are show for reference.