RQ1E100XN datasheet(4/7 Pages) ROHM

Part #	RQ1E100XN

Description	4V Drive Nch MOSFET

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Manufacturer	ROHM [Rohm]

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Data Sheet

RQ1E100XN

1

10

100

0.1

1

10

100

V

GS= 4.0V

Pulsed

Ta=125

°C

Ta=75

°C

Ta=25

°C

Ta=

-25°C

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅳ)

DRAIN-CURRENT : I

D[A]

0.1

1

10

100

0.01

0.1

1

10

100

V

DS= 10V

Pulsed

Ta=125

°C

Ta=75

°C

Ta=25

°C

Ta=

-25°C

Fig.8 Forward Transfer Admittance

vs. Drain Current

DRAIN-CURRENT : I

D[A]

0.01

0.1

1

10

100

0

0.5

1

1.5

V

GS=0V

Pulsed

Ta=125

°C

Ta=75

°C

Ta=25

°C

Ta=

-25°C

Fig.9 Reverse Drain Current

vs. Sourse-Drain Voltage

SOURCE-DRAIN VOLTAGE : V

SD [V]

0

10

20

30

40

50

0

2

4

6

8

10

I

D= 10.0A

I

D= 5.0A

Ta=25

°C

Pulsed

Fig.10 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

GATE-SOURCE VOLTAGE : V

GS[V]

1

10

100

1000

10000

0.01

0.1

1

10

100

t

f

t

d(on)

t

d(off)

Ta=25

°C

V

DD=15V

V

GS=10V

R

G=10Ω

Pulsed

t

r

Fig.11 Switching Characteristics

DRAIN-CURRENT : I

D[A]

0

2

4

6

8

10

0

5

10

15

20

25

Ta=25

°C

V

DD= 15V

I

D= 10A

R

G=10Ω

Pulsed

Fig.12 Dynamic Input Characteristics

TOTAL GATE CHARGE : Qg [nC]

4/6

2011.04 - Rev.A

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RQ1E100XN Datasheet(PDF) 4 Page - Rohm

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