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RSX1001T3 Datasheet(PDF) 1 Page - Rohm |
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RSX1001T3 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky barrier diode RSX1001T3 Applications Dimensions (Unit : mm) Structure Switching power supply Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C) Symbol Unit Reverse voltage (repetitive peak) VRM V VR V Average rectified forward current (*1) Io A Forward current surge peak (60Hz / 1cyc) (*1) IFSM A Tj C Tstg C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132 C Electrical characteristic (Ta=25°C) Symbol Min. Typ. Max. Unit Forward voltage VF - - 0.45 V IF=5A Reverse current IR - - 500 A VR=30V Reverse recovery time jc - - 2.5 C/W junction to case 10 150 Junction temperature 150 Parameter Limits 30 Reverse voltage (DC) 30 Storage temperature 40 to 150 Conditions Parameter (1) (2) (3) 1/3 2011.05 - Rev.B |
Similar Part No. - RSX1001T3_11 |
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Similar Description - RSX1001T3_11 |
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