RUE002N05 datasheet(2/6 Pages) ROHM

Part #	RUE002N05

Description	1.2V Drive Nch MOSFET

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Manufacturer	ROHM [Rohm]

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c

2010.06 - Rev.B

Data Sheet

RUE002N05



Electrical characteristics (Ta = 25

C)

Symbol

Min.

Typ.

Max.

Unit

Gate-source leakage

IGSS

--

10

AVGS=8V, VDS=0V

Drain-source breakdown voltage V(BR)DSS

50

-

V

ID=1mA, VGS=0V

Zero gate voltage drain current

IDSS

--

1

AVDS=50V, VGS=0V

Gate threshold voltage

VGS (th)

0.3

-

1.0

V

VDS=10V, ID=1mA

-1.6

2.2

ID=200mA, VGS=4.5V

-1.7

2.4

ID=200mA, VGS=2.5V

-1.9

2.7

ID=100mA, VGS=1.8V

-2.0

4.0

ID=40mA, VGS=1.5V

-2.4

7.2

ID=20mA, VGS=1.2V

Forward transfer admittance

l Yfs l

0.4

-

S

ID=200mA, VDS=10V

Input capacitance

Ciss

-25

-

pF

VDS=10V

Output capacitance

Coss

-6

-

pF

VGS=0V

Reverse transfer capacitance

Crss

-3

-

pF

f=1MHz

Turn-on delay time

td(on)

-4

-

ns

ID=100mA, VDD 30V

Rise time

tr

-6

-

ns

VGS=4.5V

Turn-off delay time

td(off)

-15

-

ns

RL=300

Fall time

tf

-55

-

ns

RG=10

*Pulsed

Conditions

Parameter

Static drain-source on-state

resistance

RDS (on)



*



Body diode characteristics (Source-Drain) (Ta = 25

C)

Symbol

Min.

Typ.

Max.

Unit

Forward voltage

VSD

--

1.2

V

Is=200mA, VGS=0V

*Pulsed

Conditions

Parameter

*

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