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SP8M51 Datasheet(PDF) 1 Page - Rohm |
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SP8M51 Datasheet(HTML) 1 Page - Rohm |
1 / 11 page Data Sheet www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4V Drive Nch + Pch MOSFET SP8M51 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Package Taping Code TB Basic ordering unit (pieces) 2500 SP8M51 Absolute maximum ratings (Ta = 25 C) Tr1 : N-ch Tr2 : P-ch Drain-source voltage VDSS 100 100 V Gate-source voltage VGSS ±20 ±20 V Continuous ID 3.0 2.5 A Pulsed IDP 12 10 A Continuous Is 1.0 1.0 A Pulsed Isp 12 10 A W / TOTAL W / ELEMENT Channel temperature Tch C Range of storage temperature Tstg C *1 Pw 10s, Duty cycle1% *2 Mounted on a ceramic board. Total power dissipation PD 2.0 Symbol Type Source current (Body Diode) Drain current Parameter Unit Limits 1.4 55 to 150 150 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗ 1 ESD PROTECTION DIODE ∗ 2 BODY DIODE SOP8 (1) (8) (5) (4) *1 *1 Dimensions (Unit : mm) Inner circuit ∗2 ∗1 ∗2 ∗1 (8) (7) (1) (2) (6) (5) (3) (4) *2 1/10 2011.02 - Rev.A |
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