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DB3 Datasheet(PDF) 1 Page - Micro Commercial Components |
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DB3 Datasheet(HTML) 1 Page - Micro Commercial Components |
1 / 3 page Features l The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. l These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal motor speed control ,and heat control. Electrical Characteristics @ 25oC Unless Otherwise Specified DB3/DC34 AND DB4 SILICON BIDIRECTIONAL DIAC Power dissipation on Printed Circuit(l=10mm) PC 150mW T A=65 oC Repetitive Peak on-state Current DB3,DC34,DB4 ITRM 2.0A Breakover Voltage Symmetry DB3, DC34, DB4 |+VBO| -|-V BO| ±3V C=22nF(Note 3) Voltage(Note 2) V o(min) 5V Breakover Current(Note 2) IBO(max) 100uA C=22nF Rise Time(Note 2) Tr 1.5us Leakage Current(Note 2) IB(max) 10uA VB=0.5VBO(max) DO-35G INCHES MM DIM MIN MAX MIN MAX NOTE A --- .150 --- 3.8 B --- .079 --- 2.00 C --- .020 --- .52 D 1.083 --- 27.50 --- A B C D D DIMENSIONS omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC Revision: B 2011/06/20 TM Micro Commercial Components www.mccsemi.com 1 of 3 Type number is marked. • Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information) • Moisture Sensitivity: Level 1 2. Electrical characteristics applicable in both forward and Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5. reverse directions. 3. Connected in parallel with the devices. tp=10us, f=100HZ Breakover Voltage DB3 DC34 DB4 VBO Min Typ Max 28 32 36V 30 34 38V 35 40 45V C=22nF(Note 3) Output Dynamic Breakover Voltage Δ V VBO and VF at10mA (Note 2) 5V(Min.) l Operating Temperature: -40 oC to +125oC l Storage Temperature: -40 oC to +125oC l Thermal Resistance Junction to Lead:167 C/W l Thermal Resistance Junction to Ambient: 400 C/W Maximum Ratings o o |
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