Features

The three layer, two terminal, axial lead, hermetically sealed

diacs are designed specifically for triggering thyristors.

Intended for use in thyrisitors phase control ,

circuits for lamp dimming, universal motor speed control ,and

heat control.

Electrical Characteristics @ 25

DB3TG

SILICON

BIDIRECTIONAL

DIAC

Power dissipation

on Printed

Circuit(l=10mm)

150mW

T

Repetitive Peak

on-state Current

2.0A

t

Breakover Voltage

Min Typ Max

30 32 34V

C=22nF(Note 3)

Breakover

Current(Note 2)

15uA

C=22nF

Rise Time(Note 2)

2us(max)

Leakage

Current(Note 2)

10uA

DO-35G

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

---

.150

---

3.8

B

---

.079

---

2.00

C

---

.020

---

.52

D

1.083

---

27.50

---

A

B

C

D

D

DIMENSIONS

omponents

20736 Marilla

Street Chatsworth



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MCC

Revision: B

2011/06/21

TM

Micro Commercial Components

1 of 3

Compliant. See ordering information)

2. Electrical characteristics applicable in both forward and

Note:

1. Lead in Glass Exemption Applied, see EU Directive Annex 5.

reverse directions.

3. Connected in parallel with the devices.

Dynamic breakover

voltage (Note2)

10mA

∆ V

9V(Min)

Breakover Voltage

Symmetry

-|-V

±2V

C=22nF(Note 3)

Voltage(Note 2)

Output

V

o(min)

5V

Storage Temperature: -40

Thermal Resistance Junction to Lead:167 C/W

Thermal Resistance Junction to Ambient: 400 C/W

Maximum Ratings

o

o

Operating Temperature: -40