DL4150

200mA

Small Signal

Diodes

50 Volts

Features

•

For general purpose and switching

•

Silicon Epitaxial Planar Diodes

•

These diodes are also available in other case styles including: the

DO-35 case with the type designations 1N4150, the SOD-123 case

with the type designations 1N4150W

Parameter

Symbol

Value

Condition

Working Inverse Voltage

50V

Maximum Rectified

Current (Average)

200mA

DC Forward Current

400mA

Recurrent Peak Forward

Current

600mA

Peak Forward Surge

Current

1.0A

4.0A

Pulse Width=1.0s

Pulse Width=1.0

μs

Storage Temperature

Range

-65

℃to +200℃

Operating Junction

Temperature

175

℃

Thermal Characteristics @ 25°C Unless Otherwise Specified

Total Device Dissipation

Derate above 25

℃

500mW

3.33mW/

℃

Thermal Resistance,

Junction to Ambient

300

℃/W

MINIMELF(SOD-80C)

A

B

C

Cathode Mark

DIMENSION

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

.130

.146

3.30

3.70

B

.008

.016

0.20

0.40

C

.055

.059

1.40

1.50

0.030”

0.105

0.075”

SUGGESTED SOLDER

PAD LAYOUT

omponents

20736 Marilla

Street Chatsworth



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MCC

Revision: A

2011/01/01

TM

Micro Commercial Components

1 of 3

Note:1.Lead in Glass Exemption Applied, see EU Directive Annex 5.

•

Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates

Compliant. See ordering information)

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisture Sensitivity Level 1