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RF6886 Datasheet(PDF) 3 Page - RF Micro Devices |
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RF6886 Datasheet(HTML) 3 Page - RF Micro Devices |
3 / 16 page 3 of 16 RF6886 DS100817 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Parameter Specification Unit Condition Min. Typ. Max. See 865MHz to 955MHz Evaluation Board Schematic. TA=25 °C Operating Frequency 865 900 955 MHz VCC=3.6V, VREG1=VREG2=3.1V, ICQ total=390mA OP1dB 33.5 dBm Small SIgnal Gain 31.0 dB Saturated Output Power (PSAT) 36.2 dBm Saturated Efficiency 50 54 % Saturated Output Power (PSAT) 35.5 dBm VCC=3.3V, VREG1=VREG2=3.1V ICQ total=380mA Saturated Efficiency 53.5 % Saturated Output Power (PSAT) 34.4 dBm VCC=3.0V, VREG1=VREG2=3.1V ICQ total=370mA Saturated Efficiency 52.5 % CDMA ADJ Channel Power -52 dBc CDMA: PAR=4.5dB, POUT=31.5dBm, 1.23MHz channel BW, ADJ CH offset/BW=750kHz/30kHz, ALT CH offset/BW=1.98MHz/30kHz CDMA ALT Channel Power -66 dBc Quiescent Current (ICQ) 340 390 420 mA VCC=3.6V, VREG1=VREG2=3.1V Leakage Current 10 uA VCC=3.6V, VREG1=VREG2=0V Current at VREG1 and VREG2 (IREG1 and IREG2) 3mA VCC=3.6V, VREG1=VREG2=3.1V. VREG1/2 supplied through 220 bias resistance (see evaluation board schematic). Thermal Resistance, RTH 11 °C/W |
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