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ACT8810 Datasheet(PDF) 10 Page - Active-Semi, Inc |
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ACT8810 Datasheet(HTML) 10 Page - Active-Semi, Inc |
10 / 53 page SYSTEM MANAGEMENT ACT8810 Rev 8, 08-Oct-10 Active-Semi Innovative Power TM - 10 - www.active-semi.com Copyright © 2010 Active-Semi, Inc. ActivePMU TM and ActivePathTM are trademarks of Active-Semi. I 2CTM is a trademark of NXP. ELECTRICAL CHARACTERISTICS (VVSYS = 3.6V, TA = 25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Input Voltage Range 2.6 5.5 V UVLO Threshold Voltage VSYS Rising 2.35 2.5 2.6 V UVLO Hysteresis VSYS Falling 100 mV VSYS Supply Current ONx = VSYS 70 µA VSYS Shutdown Current ONx = GA, Not Charging 30 µA Voltage Reference 1.24 1.25 1.26 V Oscillator Frequency 1.35 1.6 1.85 MHz Logic High Input Voltage ON1, ON2, ON3, VSEL 1.4 V Logic Low Input Voltage ON1, ON2, ON3, VSEL 0.4 V Leakage Current VON1 = VON2 = VON3 = VVSEL = VnIRQ = VnRSTO = 4V 1 µA nPBIN Internal Pull-up Resistance 50 kΩ Low Level Output Voltage nIRQ, nRSTO. Sinking 10mA 0.3 V Thermal Shutdown Temperature Temperature Rising 160 °C Thermal Shutdown Hysteresis Temperature Decreasing 20 °C nRSTO Delay 260 ms |
Similar Part No. - ACT8810_10 |
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Similar Description - ACT8810_10 |
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