ISL85033

9

FN6676.4

September 22, 2011

POWER-GOOD

PG1, PG2 Trip Level PG to PGOOD1,

PGOOD2

Rise

91

94

%

Fall

82.5

85.5

%

PG1, PG2 Propagation Delay

Percentage of the soft-start time

10

%

PG1, PG2 Low Voltage

ISINK = 3mA

100

300

mV

ENABLE INPUT

EN1, EN2 Leakage Current

EN1/2 = 0V/5V

-1

1

µA

EN1, EN2 Input Threshold Voltage

Low Level

0.8

V

Float Level

1.0

1.4

V

High Level

2

V

SYNC INPUT/OUTPUT

SYNCIN Input Threshold

Falling Edge

1.1

1.4

V

Rising Edge

1.6

1.9

V

Hysteresis

200

mV

SYNCIN Leakage Current

SYNCIN = 0V/5V

10

1000

nA

SYNCIN Pulse Width

100

ns

SYNCOUT Phase-shift to SYNCIN

Measured from rising edge to rising

edge, if duty cycle is 50%

180

°

SYNCOUT Frequency Range

600

4000

kHz

SYNCOUT Output Voltage High

ISYNCOUT = 3mA

V

SYNCOUT Output Voltage Low

0.08

0.3

V

FAULT PROTECTION

Thermal Shutdown Temperature

Rising Threshold

150

°C

Hysteresis

20

°C

Overcurrent Protection Threshold

(Note 7)

4.1

5.1

6.1

A

OCP Blanking Time

60

ns

POWER MOSFET

Highside

75

150

m

Ω

Internal BOOT1, BOOT2 Refresh Lowside

1

Ω

PHASE Leakage Current

EN1/2 = PHASE1/2 = 0V

300

nA

PHASE Rise Time

10

ns

NOTES:

8. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization

and are not production tested.

Boldface limits apply over the operating temperature range, -40°C to +85°C

(Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

(Note 8)

TYP

MAX

(Note 8)

UNITS