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2N3767 Datasheet(PDF) 2 Page - Seme LAB |
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2N3767 Datasheet(HTML) 2 Page - Seme LAB |
2 / 2 page SILICON NPN TRANSISTOR 2N3767 Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9157 Issue 1 Page 2 of 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ. Max. Unit V(BR)CEO (1) Collector-Emitter Breakdown Voltage IC = 100mA IB = 0 80 V ICEO Collector-Emitter Cut off Current VCE = 80V 500 IEBO Emitter-Base Cut-Off Current VEB = 6.0V IC = 0 500 VCE = 100V VBE = -1.5V 10 µ A VCE = 70V VBE = -1.5V ICEX Collector-Emitter Cut-Off Current TA = 150°C 1.0 mA ICBO Collector-Base Cut-Off Current VCB = 100V IE = 0 10 µ A VBE (1) Base-Emitter Voltage VCE = 10V IC = 1.0A 1.5 V IC = 50mA VCE = 5V 30 IC = 500mA VCE = 5V 40 160 TA = -55°C 13 hFE (1) DC Current Gain IC = 1.0A VCE = 10V 20 IC = 500mA IB = 50mA 1.0 VCE(sat) (1) Collector-Emitter Saturation Voltage IC = 1.0A IB = 100mA 2.5 VBE(sat) (1) Base-Emitter Saturation Voltage IC = 1.0A IB = 100mA 1.5 V DYNAMIC CHARACTERISTICS IC = 500mA VCE = 10V |hfe| Magnitude of Small-Signal Short-Circuit Current Gain f = 10MHz 1.0 8.0 VCB = 10V IE = 0 Cobo Output Capacitance f = 1.0MHz 50 pF ton Turn On Time VCC = 30V IC = 500mA 0.25 toff Turn Off Time IB1 = 50mA IB2 = - IB1 2.5 µ s Notes Notes Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% MECHANICAL DATA Dimensions in mm (inches) TO66 (TO-213AA) METAL PACKAGE Underside View Underside View Underside View Underside View PIN 1 - Base PIN 2 - Emitter Case - Collector 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 1.27 (0.050) 1.91 (0.750) 9.14 (0.360) min. 4.83 (0.190) 5.33 (0.210) 6.35 (0.250) 8.64 (0.340) 1 2 |
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