SILICON EPITAXIAL

NPN TRANSISTOR

2N5154N2A

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 9081

Issue 2

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CEO

(2)

Collector-Emitter

Breakdown Voltage

IC = 10mA

80

V

VCE = 60V

VBE = 0

1.0

µA

ICES

Collector Cut-Off Current

VCE = 100V

VBE = 0

1.0

mA

VCE = 60V

VBE = -2V

ICEX

Collector Cut-Off Current

TC = 150°C

25

ICEO

Collector Cut-Off Current

VCE = 60V

IB = 0

50

VEB = 4V

IC = 0

1.0

µA

IEBO

Emitter Cut-Off Current

VEB = 5.5V

IC = 0

1.0

mA

IC = 50mA

VCE = 5V

50

IC = 2.5A

VCE = 5V

70

200

TC = -55°C

25

hFE

(2)

Forward-current transfer

ratio

IC = 5A

VCE = 5V

40

-

VBE

(2)

Base-Emitter Voltage

IC = 2.5 A

VCE = 5V

1.45

IC = 2.5A

IB = 250mA

1.45

VBE(sat)

(2)

Collector-Emitter Saturation

Voltage

IC = 5A

IB = 500mA

2.2

IC = 2.5A

IB = 250mA

0.75

VCE(sat)

(2)

Base-Emitter Saturation

Voltage

IC = 5A

IB = 500mA

1.5

V

DYNAMIC CHARACTERISTICS

IC = 500mA

VCE = 5V

 hfe

Magnitude of common-

emitter, small-signal short-

circuit, forward-current

transfer ratio

f = 20MHz

1.2

-

IC = 100mA

VCE = 5V

hfe

Small-Signal Current Gain

f = 1.0 KHz

50

-

VCB = 10V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

250

pF

ton

Turn-On Time

VCC = 30V

IC = 5A

0.5

ts

Storage Time

IB1 = 500mA

IB2 = - IB1

1.4

tf

Fall Time

RL = 6Ω

0.5

toff

Turn-Off Time

1.5

µS

Notes

Notes

Notes

Notes

(2)

Pulse Width ≤ 300us, δ ≤ 2%