N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

2N6661

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 3092

Issue 5

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown

Voltage

VGS = 0

ID = 1.0µA

90

V

VDS = VGS

ID = 1.0mA

0.8

2.0

TC = 125°C

0.3

VGS(th)

Gate Threshold Voltage

TC = -55°C

2.5

V

VGS = ±20V

VDS = 0V

±100

IGSS

Gate-Source Leakage Current

TC = 125°C

±500

nA

VDS = 72V

VGS = 0

1.0

IDSS

Zero Gate Voltage

Drain Current

TC = 125°C

100

µA

On-State Drain Current

VDS = 10V

VGS = 10V

1.5

A

VGS = 5V

ID = 0.3A

5.3

VGS = 10V

ID = 1.0A

4.0

RDS(on)

(2)

Static Drain-Source

On-State Resistance

TC = 125°C

7.5

Ω

VGS = 5V

ID = 0.3A

1.6

VGS = 10V

ID = 1.0A

4.0

VDS(on)

(2)

Static Drain-Source

On-State Voltage

TC = 125°C

7.5

V

gfs

(2)

Forward Transconductance

VDS = 7.5V

ID = 0.475A

170

mƱ

VSD

(2)

Body Diode Forward Voltage

VGS = 0

IS = 0.86A

0.7

1.4

V

trr

(2)

Body Diode Reverse Recovery

VGS = 0

IS = 1.0A

350

ns

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0

50

Coss

Output Capacitance

VDS = 25V

40

Crss

Reverse Transfer Capacitance

f = 1.0MHz

10

pF

td(on)

Turn-On Delay Time

VDD = 25V

10

td(off)

Turn-Off Delay Time

ID = 1.0A

RG = 50Ω

10

ns