BDS12SMD05 datasheet(2/2 Pages) SEME-LAB

Part #	BDS12SMD05

Description	SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES

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Manufacturer	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Document Number 3254

Issue 3

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

BDS10

BDS10SMD

BDS10SMD05

BDS11

BDS11SMD

BDS11SMD05

BDS12

BDS12SMD

BDS12SMD05

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BDS10

VCB = 60V

BDS11

VCB = 80V

BDS12

VCB = 100V

BDS10

VCE = 30V

BDS11

VCE = 40V

BDS12

VCE = 50V

VEB = 5V

BDS10

BDS11

IC = 100mA

BDS12

IC = 5A

IB = 0.5A

IC = 10A

IB = 2.5A

IC = 10A

IB = 2.5A

IC = 5A

VCE = 4V

IC = 0.5A

VCE = 4V

IC = 5A

VCE = 4V

IC = 10A

VCE = 4V

IC = 0.5A

VCE = 4V

f = 1MHz

500

1.0

60

80

100

1.0

3

2.5

1.5

40

250

15

150

5

3

µA

mA

V

MHz

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

*Pulsed : Pulse duration = 300

µs , duty cycle = 1.5%

Parameter

Test Conditions

Max.

Unit

ton

ts

tr

On Time

(td + tr)

Storage Time

Fall Time

IC = 4A

VCC = 30V

IB1 = 0.4A

IC = 4A

VCC = 30V

IB1 = –IB2 = 0.4A

0.7

1.0

0.8

µs

SWITCHING CHARACTERISTICS

ICBO

ICEO

IEBO

VCEO(sus)*

VCE(sat)*

VBE(sat)*

VBE*

hFE*

fT

Collector cut-off current

(IE = 0)

Collector cut-off current

(IB = 0)

Emitter cut-off current

(IC = 0)

Collector - Emitter

sustaining voltage (IB = 0)

Collector - Emitter

saturation voltage

Base - Emitter

saturation voltage

Base - Emitter voltage

DC Current Gain

Transition frequency

Test Conditions

Max.

Unit

RθJ-C

Thermal Resistance Junction to Case

4.0

°C/W

THERMAL CHARACTERISTICS

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