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BDX66 Datasheet(PDF) 2 Page - Seme LAB |
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BDX66 Datasheet(HTML) 2 Page - Seme LAB |
2 / 3 page PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8760 Issue 1 Page 2 of 3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ. Max. Units BDX66 -60 BDX66A -80 BDX66B -100 V(BR)CEO (1) Collector-Emitter Breakdown Voltage IC = -100mA BDX66C -120 V ICEO Collector Cut-Off Current VCE =0.5×VCEO(max) IB =0 -1.0 IE = 0 VCB =VCBO(max) -1.0 VCB = -40V BDX66 IE = 0 VCB = -50V BDX66A VCB = -60V BDX66B ICBO Collector-Base Cut-Off Current TJ =200°C VCB = -70V BDX66C -5 IEBO Emitter Cut-Off Current VEB = -5V IC = 0 -5 mA VCE(sat) (1) Collector-Emitter Saturation Voltage IC = -10A IB = -40mA -2 VBE (1) Base-Emitter Voltage IC = -10A VCE = -3V -2.5 VF Diode Forward Voltage IF = 10A 2 V IC = -1.0A 2000 IC = -10A 1000 hFE (1) Forward-current transfer ratio VCE = -3V IC = -16A 1000 - DYNAMIC CHARACTERISTICS IC = -5A VCE = -3V hfe Magnitude of common emitter small-signal short- circuit forward current transfer ratio f = 1.0MHz 50 - VCB = -10V IE = 0 Cobo Output Capacitance f = 1.0MHz 300 pF ton Turn-On Time IC = -10A VCC = -12V 1.0 toff Turn-Off Time -IB1 = IB2 = 40mA 3.5 µS Notes Notes Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% |
Similar Part No. - BDX66_10 |
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Similar Description - BDX66_10 |
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