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BDX66 Datasheet(PDF) 2 Page - Seme LAB

Part # BDX66
Description  PNP DARLINGTON SILICON POWER TRANSISTOR
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BDX66 Datasheet(HTML) 2 Page - Seme LAB

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PNP DARLINGTON
SILICON POWER TRANSISTOR
BDX 66, A, B, C
Semelab Limited
Semelab Limited
Semelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8760
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Units
BDX66
-60
BDX66A
-80
BDX66B
-100
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = -100mA
BDX66C
-120
V
ICEO
Collector Cut-Off Current
VCE =0.5×VCEO(max)
IB =0
-1.0
IE = 0
VCB =VCBO(max)
-1.0
VCB = -40V
BDX66
IE = 0
VCB = -50V
BDX66A
VCB = -60V
BDX66B
ICBO
Collector-Base Cut-Off
Current
TJ =200°C
VCB = -70V
BDX66C
-5
IEBO
Emitter Cut-Off Current
VEB = -5V
IC = 0
-5
mA
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = -10A
IB = -40mA
-2
VBE
(1)
Base-Emitter Voltage
IC = -10A
VCE = -3V
-2.5
VF
Diode Forward Voltage
IF = 10A
2
V
IC = -1.0A
2000
IC = -10A
1000
hFE
(1)
Forward-current transfer
ratio
VCE = -3V
IC = -16A
1000
-
DYNAMIC CHARACTERISTICS
IC = -5A
VCE = -3V
hfe
Magnitude of common
emitter small-signal short-
circuit forward current
transfer ratio
f = 1.0MHz
50
-
VCB = -10V
IE = 0
Cobo
Output Capacitance
f = 1.0MHz
300
pF
ton
Turn-On Time
IC = -10A
VCC = -12V
1.0
toff
Turn-Off Time
-IB1 = IB2 = 40mA
3.5
µS
Notes
Notes
Notes
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%


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