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TSC136LCPROG Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC136LCPROG Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 6 page TSC136L High Voltage NPN Transistor 1/6 Version: B09 TO-251 (IPAK) TO-252 (DPAK) Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TSC136LCP RO TO-252 2.5Kpcs / 13” Reel TSC136LCP ROG TO-252 2.5Kpcs / 13” Reel TSC136LCH C5 TO-251 70pcs / Tube TSC136LCH C5G TO-251 70pcs / Tube Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 V Total Dissipation @ TC ≤ 25 oC PTOT 40 W Collector Peak Current (tp <5ms) ICM 4 A Collector Current IC 2 A Base Peak Current (tp <5ms) IBM 2 A Base Current IB 1.5 A Maximum Operating Junction Temperature TJ +150 oC Storage Temperature Range TSTG -65 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance RӨJC 2.08 oC/W Block Diagram Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 2A VCE(SAT) 0.6V @ IC / IB = 1.5A / 0.5A |
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