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TSM4416D Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM4416D Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM4416D 30V Dual N-Channel MOSFET 1/6 Version: A11 SOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(m ) ID (A) 30 15 @ VGS = 4.5V 11 24 @ VGS = 2.5V 10 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● Load Switch ● PWM Application Ordering Information Part No. Package Packing TSM4416DCS RL SOP-8 2.5Kpcs / 13” Reel TSM4416DCS RLG SOP-8 2.5Kpcs / 13” Reel Note: “G” denotes Halogen Free Product. Absolute Maximum Rating (TA=25 oC, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 8.5 A Pulsed Drain Current IDM 40 A Continuous Source Current (Diode Conduction) a,b IS 2.6 A Maximum Power Dissipation Ta = 25 oC PD 2.5 W Ta = 75 oC 1.6 Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Thermal Resistance Junction to Foot RӨJF 25 oC/W Thermal Resistance Junction to Ambient RӨJA 50 oC/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Dual N-Channel MOSFET Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 |
Similar Part No. - TSM4416D_11 |
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Similar Description - TSM4416D_11 |
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