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MPSH10 Datasheet(PDF) 1 Page - Micro Commercial Components |
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MPSH10 Datasheet(HTML) 1 Page - Micro Commercial Components |
1 / 2 page MPSH10 NPN RF Transistor Features • Capable of 0.35Watts of Power Dissipation. • Collector Current: 0.05A Maximum Ratings* Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current 50 mA PD Power Dissipation 0.35 W TJ Operating Junction Temperature -55 to +150 TSTG Storage Temperature -55 to +150 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* (IC=1mAdc, IB=0) 25 --- Vdc V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) 30 --- Vdc V(BR)EBO Emitter-Base Breakdown Voltage (IE=10uAdc, IC=0) 3.0 --- Vdc ICBO Collector Cutoff Current (VCB=25Vdc, IE=0) --- 0.1 uAdc ICEO Collector Cutoff Current (VCE=20Vdc, IB=0) 0.2 uAdc IEBO Emitter Cutoff Current (VEB=2.0Vdc, IC=0) --- 0.1 uAdc ON CHARACTERISTICS * hFE DC Current Gain (IC=4mAdc, VCE=10Vdc) 60 200 --- VCE(sat) Collector-Emitter Saturation Voltage (IC=4mAdc, IB=0.4mAdc) --- 0.5 Vdc VBE(on) Base-Emitter On Voltage (IC=4mAdc, VCE=10Vdc) --- 0.95 Vdc fT Transition Frequency (VCE=10V, IC=4mA, f=100MHz) 650 --- MHz TO-92 A E B C D G DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A .170 .190 4.33 4.83 B .170 .190 4.30 4.83 C .550 .590 13.97 14.97 D .010 .020 0.36 0.56 E .130 .160 3.30 3.96 G .0 96 .104 2.44 2.64 omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC Revision: A 2011/01/01 TM Micro Commercial Components www.mccsemi.com 1 of 2 • Marking:MPSH10 • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 B E C |
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