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NTB0102 Datasheet(PDF) 4 Page - NXP Semiconductors

Part # NTB0102
Description  Dual supply translating transceiver; auto direction sensing ; 3-state
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

NTB0102 Datasheet(HTML) 4 Page - NXP Semiconductors

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NTB0102
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 28 April 2011
4 of 26
NXP Semiconductors
NTB0102
Dual supply translating transceiver; auto direction sensing; 3-state
7.
Functional description
[1]
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
[2]
When either VCC(A) or VCC(B) is at GND level, the device goes into Power-down mode.
8.
Limiting values
[1]
The minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
VCCO is the supply voltage associated with the output.
[3]
VCCO + 0.5 V should not exceed 6.5 V.
[4]
For TSSOP8 package: above 55
°C the value of P
tot derates linearly with 2.5 mW/K.
For XSON8 and XSON8U packages: above 118
°C the value of P
tot derates linearly with 7.8 mW/K.
For XQFN10 package: above 128
°C the value of P
tot derates linearly with 11.5 mW/K.
OE
6
4
output enable input (active HIGH;
referenced to VCC(A))
VCC(B)
7
6
supply voltage B
n.c.
-
3, 7
not connected
Table 3.
Pin description …continued
Symbol
Pin
Description
SOT505-2, SOT833-1, SOT1089 and SOT996-2
SOT1160-1
Table 4.
Function table[1]
Supply voltage
Input
Input/output
VCC(A)
VCC(B)
OE
An
Bn
1.2 V to VCC(B)
1.65 V to 5.5 V
L
Z
Z
1.2 V to VCC(B)
1.65 V to 5.5 V
H
input or output
output or input
GND[2]
GND[2]
XZ
Z
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC(A)
supply voltage A
−0.5
+6.5
V
VCC(B)
supply voltage B
−0.5
+6.5
V
VI
input voltage
[1]
−0.5
+6.5
V
VO
output voltage
Active mode
[1][2][3]
−0.5
VCCO +0.5
V
Power-down or 3-state mode
[1]
−0.5
+6.5
V
IIK
input clamping current
VI <0V
−50
-
mA
IOK
output clamping current
VO <0V
−50
-
mA
IO
output current
VO =0Vto VCCO
[2] -
±50
mA
ICC
supply current
ICC(A) or ICC(B)
-100
mA
IGND
ground current
−100
-
mA
Tstg
storage temperature
−65
+150
°C
Ptot
total power dissipation
Tamb = −40 °C to +125 °C
[4] -250
mW


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