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NTB0102 Datasheet(PDF) 4 Page - NXP Semiconductors |
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NTB0102 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 26 page NTB0102 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 — 28 April 2011 4 of 26 NXP Semiconductors NTB0102 Dual supply translating transceiver; auto direction sensing; 3-state 7. Functional description [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. [2] When either VCC(A) or VCC(B) is at GND level, the device goes into Power-down mode. 8. Limiting values [1] The minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed. [2] VCCO is the supply voltage associated with the output. [3] VCCO + 0.5 V should not exceed 6.5 V. [4] For TSSOP8 package: above 55 °C the value of P tot derates linearly with 2.5 mW/K. For XSON8 and XSON8U packages: above 118 °C the value of P tot derates linearly with 7.8 mW/K. For XQFN10 package: above 128 °C the value of P tot derates linearly with 11.5 mW/K. OE 6 4 output enable input (active HIGH; referenced to VCC(A)) VCC(B) 7 6 supply voltage B n.c. - 3, 7 not connected Table 3. Pin description …continued Symbol Pin Description SOT505-2, SOT833-1, SOT1089 and SOT996-2 SOT1160-1 Table 4. Function table[1] Supply voltage Input Input/output VCC(A) VCC(B) OE An Bn 1.2 V to VCC(B) 1.65 V to 5.5 V L Z Z 1.2 V to VCC(B) 1.65 V to 5.5 V H input or output output or input GND[2] GND[2] XZ Z Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC(A) supply voltage A −0.5 +6.5 V VCC(B) supply voltage B −0.5 +6.5 V VI input voltage [1] −0.5 +6.5 V VO output voltage Active mode [1][2][3] −0.5 VCCO +0.5 V Power-down or 3-state mode [1] −0.5 +6.5 V IIK input clamping current VI <0V −50 - mA IOK output clamping current VO <0V −50 - mA IO output current VO =0Vto VCCO [2] - ±50 mA ICC supply current ICC(A) or ICC(B) -100 mA IGND ground current −100 - mA Tstg storage temperature −65 +150 °C Ptot total power dissipation Tamb = −40 °C to +125 °C [4] -250 mW |
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