40822 datasheet(1/1 Pages) ASI

Part #	40822

Description	MOS FIELD-EFFECT TRANSISTOR

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Manufacturer	ASI [Advanced Semiconductor]

Direct Link	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

1/1

Specifications are subject to change without

CHARACTERISTICS T

A = 25

OC

NONE

SYMBOL

TEST CONDITIONS

MINIMUM

TYPICAL

MAXIMUM

UNITS

VG1S(OFF)

VDS = 15 V

VG2S = 4.0 V

ID = 50 µA

-2.0

-4.0

V

VG2S(OFF)

VDS = 15 V

VG1S = 0 V

ID = 50 µA

-2.0

-4.0

V

IG1SSF

VG1S = 6.0 V

VG2S = VDS = 0 V

50

µA

IG1SSR

VG1S = -6.0 V VG2S = VDS = 0 V

50

µA

IG2SSF

VG2S = 6.0 V

VG1S = VDS = 0 V

50

µA

IG2SSR

VG2S = -6.0 V VG1S = VDS = 0 V

50

µA

IDS

VDS = 15 V

VG1S = 0 V

VG2S = 4.0 V

5.0

15

30

mA

V(BR)G1

IG1 = ±100 µA

9.0

V

V(BR)G2

IG2 = ±100 µA

9.0

V

gfs

VDS = 15 V

VG2S = 4.0 V

ID = 10 mA

f = 1.0 KHz

12000

µmho

Crss

Ciss

Coss

VDS = 15 V

VG2S = 4.0 V

ID = 10 mA

f = 1.0 MHz

0.005

6.5

2.0

0.03

9.5

pF

GPS

NF

VDS = 15 V

VG2S = 4.0 V

ID = 10 mA

f

= 200 MHz

19

24

2.0

3.5

dB

MOS FIELD-EFFECT TRANSISTOR

40822

DESCRIPTION:

The

ASI 40822 is a N-Channel Dual-

Gate Depletion Type Transistor With

Monolithic Gate Protection Diodes,

used in RF,IF Amplifier and Mixer

Applications up to 150 MHz.

MAXIMUM RATINGS

ID

50 mA

VD

24 V

PDISS

330 mW @ TA = 25

OC

TJ

-65

OC to +175 OC

TSTG

-65

OC to +175 OC

PACKAGE STYLE TO-72

1 = Drain

2 = Gate #2

3 = Gate #1

4 = Source, Case, and Substrate

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