PSMN6R5-25YLC

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Objective data sheet

Rev. 1 — 12 July 2011

6 of 15

NXP Semiconductors

PSMN6R5-25YLC

N-channel 25 V 6.5 m

Ω logic level MOSFET in LFPAK using NextPower technology

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

drain-source breakdown

voltage

25

--V

22.5

-

-

V

see Figure 10; see Figure 11

1.05

1.54

1.95

V

0.5

--V

--2.25

V

drain leakage current

--1

µA

-

-

100

µA

gate leakage current

-

-

100

nA

-

-

100

nA

drain-source on-state

resistance

see Figure 12

-7.3

8.5

m

Ω

see Figure 13; see Figure 12

-

-

14.8

m

Ω

see Figure 12

-5.5

6.5

m

Ω

see Figure 13; see Figure 12

--11.3

m

Ω

internal gate resistance (AC)

f = 1 MHz

-

2.2

4.4

Ω

Dynamic characteristics

total gate charge

see Figure 14; see Figure 15

-

17.5

-

nC

see Figure 14; see Figure 15

-8.4

-nC

-

16

-

nC

gate-source charge

see Figure 14; see Figure 15

-2.6

-nC

pre-threshold gate-source

charge

-1.7

-nC

post-threshold gate-source

charge

-0.9

-nC

gate-drain charge

-

2.8

-

nC

gate-source plateau voltage

see Figure 15

-2.71

-V

input capacitance

-

1093

-

pF

output capacitance

-

282

-

pF

reverse transfer capacitance

-

106

-

pF

turn-on delay time

-15

-ns

rise time

-

8.6

-

ns

turn-off delay time

-

19

-

ns

fall time

-

5.7

-

ns