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DTA144TCA Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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DTA144TCA Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page  BL Galaxy Electrical Production specification Digital Transistor DTA(R1-only SERIES)CA Document number: BL/SSDTC049 www.galaxycn.com Rev.A 2 Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-Base breakdown Voltage BVCBO IC=-50μA -50 V Collector-Emitter breakdown Voltage BVCEO IC=-1mA -50 V Emitter-Base breakdown Voltage BVEBO IE=-50μA -5 V Collector cutoff Current ICBO VCB=-50V - - -0.5 μA Emitter cutoff Current IEBO VEB=-4V - - -0.5 μA Collector-Emitter saturation voltage DTA143TCA DTA114TCA DTA144TCA VCE(sat) IC/IB=-2.5mA/-0.25mA IC/IB=-1mA/-0.1mA IC/IB=-2.5mA/-0.25mA -0.3 V DC Current Gain hFE IC=-1mA,VCE=-5V 100 250 600 Input Resistor(R1) DTA143TCA DTA114TCA DTA144TCA R1 4.7 10 47 KΩ Input Resistor(R1)Tolerance ΔR1 -30 +30 % Gain-Bandwidth Product fT VCE=-10V,IE=-5mA, f=100MHz - 250 - MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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