PT4850F datasheet(2/6 Pages) SHARP

Part #	PT4850F

Description	Thin Type Phototransistor

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Manufacturer	SHARP [Sharp Corporation]

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PT4800/PT4800F/PT4810/PT4810F/PT4850F

s Electro-optical Characteristics

*2 E e : Irradiance by CIE standard light source A ( tungsten lamp)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

*2Collector current

PT4800

IC

Ee = 1mW/cm2

VCE =5V

0.12

0.4

1.0

mA

PT4800F

0.08

0.25

0.75

mA

PT4850F

0.12

-

0.56

mA

PT4810

Ee = 0.1mW/cm2

0.45

-

7.0

mA

PT4810F

0.27

-

6.0

mA

VCE =2V

Collector dark current

PT4800/PT4800F

ICEO

Ee = 0, VCE = 20V

-

0.1

m A

PT4850F

PT4810/PT4810F

Ee = 0, VCE = 10V

-

1.0

m A

voltage

PT4800/PT4800F

V CE

(sat)

Ee = 10mW/cm2

-

0.4

V

PT4850F

IC = 0.5mA

PT4810/PT4810F

Ee = 1mW/cm2

-

1.0

V

IC = 2.5mA

Collector-emitter breakdown voltage

BV CEO

IC = 0.1mA

35

-

V

Ee =0

Emitter-collector breakdown voltage

BV ECO

IE = 0.01mA

6-

-

V

Ee =0

Peak sensitivity

wavelength

PT4800

λ p

-

800

-

nm

PT4800F

-

860

-

nm

PT4850F

-

860

-

nm

PT4810

-

800

-

nm

PT4810F

-

860

-

nm

t r

VCE = 2V, I C = 2mA

-

3.0

-

µ s

RL = 100

Ω

VCE =2V

IC = 10mA

RL = 100

Ω

-

80

400

µs

tf

V CE = 2V, I C = 2mA

-

3.5

-

µs

RL = 100

Ω

V CE =2V

IC = 10mA

RL = 100

Ω

-

70

350

µs

Half intensity angle

∆θ

-

±35

-

PT4800/PT4800F

PT4850F

PT4810/PT4810F

PT4800/PT4800F

PT4850F

PT4810/PT4810F

*2Collector-emitter saturation

( Ta = 25˚C)

- 25

0

25

50

75

100

0

20

40

60

80

100

85

0

25

50

75

100

2

5

2

5

2

5

2

5

Ambient temperature T a (˚C)

Fig. 1 Collector Power Dissipation vs.

Ambient Temperature

(PT4800/PT4800F/PT4850F )

Response

time

Rise time

Fall time

Fig. 2-a Collector Dark Current vs.

Ambient Temperature

VCE = 20V

10 -6

10 -7

10 -8

10 -9

10 -10

˚

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