10

10 - 26

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

GaAs MMIC SPDT SWITCH

DC - 3 GHz

v06.0608

General Description

Features

Functional Diagram

Ultra Small Package: MSOP8

High Isolation: 50 dB

Positive Control: 0/+3V to 0/+7V

Typical Applications

The HMC194MS8 /HMC194MS8E is ideal for:

• Cellular/PCS Base Stations

• Portable Wireless

• MMDS & WirelessLAN

The HMC194MS8 & HMC194MS8E are low-cost

SPDT switches in 8-lead MSOP packages for use in

applications which require high isolation between two

RF paths. The devices can control signals from DC to

3 GHz and have been optimized to provide extremely

high isolation with minimal insertion loss in medium

and low power applications. On chip circuitry allows

positive voltage control operation at very low DC cur-

rents with control inputs compatible with CMOS and

most TTL logic families. RF1 and RF2 are reflective

opens when “OFF”.

Parameter

Frequency

Min.

Typ.

Max.

Units

Insertion Loss

DC - 2.0 GHz

DC - 2.5 GHz

DC - 3.0 GHz

0.7

0.8

0.8

0.9

1.0

1.1

dB

dB

dB

Isolation

RF1 / RF2

RF1 / RF2

DC - 1.0 GHz

DC - 2.0 GHz

DC - 2.5 GHz

DC - 3.0 GHz

48 / 50

40 / 42

31

24

52 / 54

44 / 46

35

28

dB

dB

dB

dB

Return Loss

DC - 2.0 GHz

DC - 2.5 GHz

24

22

dB

dB

Input Power for 1 dB Compression

0/+5V Control

0.5 - 3.0 GHz

24

28

dBm

Input Third Order Intercept

(Two-tone Input Power = +7 dBm Each Tone)

0/+5V Control

0.5 - 3.0 GHz

49

53

dBm

Switching Characteristics

DC - 3.0 GHz

tRISE, tFALL (10/90% RF)

tON , tOFF (50% CTL to 10/90% RF)

10

24

ns

ns