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SBCT2020 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # SBCT2020
Description  Schottky Barrier Rectifier Diodes ??Common Cathode
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

SBCT2020 Datasheet(HTML) 1 Page - Diotec Semiconductor

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SBCT2020 ... SBCT20100
SBCT2020 ... SBCT20100
Schottky Barrier Rectifier Diodes – Common Cathode
Schottky-Barrier-Gleichrichterdioden – Gemeinsame Kathode
Version 2011-04-08
Dimensions - Maße [mm]
Nominal Current
Nennstrom
20 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
20...100 V
Plastic case – Kunststoffgehäuse
TO-220AB
Weight approx.
Gewicht ca.
2.2g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Forward Voltage
Durchlass-Spannung
VF [V] 1) 2)
IF = 5 A
IF = 10 A
SBCT2020
20
20
< 0.52
< 0.55
SBCT2030
30
30
< 0.52
< 0.55
SBCT2040
40
40
< 0.52
< 0.55
SBCT2045
45
45
< 0.52
< 0.55
SBCT2050
50
50
< 0.63
< 0.70
SBCT2060
60
60
< 0.63
< 0.70
SBCT2090
90
90
< 0.77
< 0.85
SBCT20100
100
100
< 0.77
< 0.85
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
IFAV
10 A 2)
20 A 3)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
30 A 2)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
SBCT2020...
SBCT2060
TA = 25°C
IFSM
130/150 A 2)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
SBCT2080...
SBCT20100
TA = 25°C
IFSM
110/125 A 2)
Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
80 A2s 2)
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
Tj
-50...+150°C
≤ 200°C
1
Tj = 25°C
2
Per diode − Pro Diode
3
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
© Diotec Semiconductor AG
http://www.diotec.com/
1
4
3
2
1
4
3
1
Type
Typ
2.54
±0.1
0.8
±0.2
1.3±0.1
10.1±0.3
Ø
±0.2
3.8
1.2±0.2
0.42
±0.4
4.5±0.2
2.67
±0.2
2


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