NCP4586

http://onsemi.com

3

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Input Voltage (Note 1)

7

V

Output Voltage

V

Chip Enable Input

−0.3 to 7

V

Output Current

200

mA

Power Dissipation UDFN4

400

mW

Power Dissipation SC−82AB

380

Power Dissipation SOT23−5

420

Maximum Junction Temperature

+150

°C

Operating Ambient Temperature

−40 to +85

°C

Storage Temperature

−55 to +125

°C

ESD Capability, Human Body Model (Note 2)

2000

V

ESD Capability, Machine Model (Note 2)

200

V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.

2. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)

ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)

Latchup Current Maximum Rating tested per JEDEC standard: JESD78.

THERMAL CHARACTERISTICS

Rating

Symbol

Value

Unit

Thermal Characteristics, UDFN4

Thermal Resistance, Junction−to−Air

250

°C/W

Thermal Characteristics, SOT23−5

Thermal Resistance, Junction−to−Air

238

°C/W

Thermal Characteristics, SC 82AB

Thermal Resistance, Junction−to−Air

263

°C/W