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327MS8GE Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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327MS8GE Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
1 / 6 page For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 11 - 2 HMC327MS8G / 327MS8GE GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz v06.1209 General Description Features Functional Diagram The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mo- unt 8 leaded package with an exposed base for improved RF and thermal performance. With a mini- mum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a single +5V supply. Power down capability is available to conserve current consumption when the amplifier is not in use. High Gain: 21 dB Saturated Power: +30 dBm @ 45% PAE Output P1dB: +27 dBm Single Supply: +5V Power Down Capability Low External Part Count Compact MSOP Package: 14.8 mm 2 Electrical Specifications, T A = +25 °C, Vs = 5V, Vctl = 5V Typical Applications The HMC327MS8G(E) is ideal for: • Wireless Local Loop • WiMAX & Fixed Wireless • Access Points • Subscriber Equipment Parameter Min. Typ. Max. Units Frequency Range 3 - 4 GHz Gain 17 21 24 dB Gain Variation Over Temperature 0.025 0.035 dB / °C Input Return Loss 15 dB Output Return Loss 8dB Output Power for 1dB Compression (P1dB) 24 27 dBm Saturated Output Power (Psat) 30 dBm Output Third Order Intercept (IP3) 36 40 dBm Noise Figure 5dB Supply Current (Icq) Vctl* = 0V/5V 0.002 / 250 mA Control Current (Ipd) Vctl* = 5V 7 mA Switching Speed tON, tOFF 40 ns *See Application Circuit for proper biasing configuration. |
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