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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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GaAs InGaP HBT MMIC

1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

v06.1209

General Description

Features

Functional Diagram

The HMC327MS8G(E) is a high efficiency GaAs

InGaP Heterojunction Bipolar Transistor (HBT) MMIC

power amplifier which operates between 3 and 4 GHz.

The amplifier is packaged in a low cost, surface mo-

unt 8 leaded package with an exposed base for

improved RF and thermal performance. With a mini-

mum of external components, the amplifier provides

21 dB of gain, +30 dBm of saturated power at 45%

PAE from a single +5V supply. Power down capability

is available to conserve current consumption when the

amplifier is not in use.

High Gain: 21 dB

Saturated Power: +30 dBm @ 45% PAE

Output P1dB: +27 dBm

Single Supply: +5V

Power Down Capability

Low External Part Count

Compact MSOP Package: 14.8 mm

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Typical Applications

The HMC327MS8G(E) is ideal for:

• Wireless Local Loop

• WiMAX & Fixed Wireless

• Access Points

• Subscriber Equipment

Parameter

Min.

Typ.

Max.

Units

Frequency Range

3 - 4

GHz

Gain

17

21

24

dB

Gain Variation Over Temperature

0.025

0.035

dB / °C

Input Return Loss

15

dB

Output Return Loss

8dB

Output Power for 1dB Compression (P1dB)

24

27

dBm

Saturated Output Power (Psat)

30

dBm

Output Third Order Intercept (IP3)

36

40

dBm

Noise Figure

5dB

Supply Current (Icq)

Vctl* = 0V/5V

0.002 / 250

mA

Control Current (Ipd)

Vctl* = 5V

7

mA

Switching Speed

tON, tOFF

40

ns

*See Application Circuit for proper biasing configuration.