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376LP3E Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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376LP3E Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
1 / 6 page For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 7 - 1 HMC376LP3 / 376LP3E GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz v01.0610 General Description Features Functional Diagram The HMC376LP3 & HMC376LP3E are GaAs PHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 0.7 dB noise figure, 15 dB gain and +36 dBm output IP3 from a single supply of +5V. The HMC376LP3(E) feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. For applications which require improved noise figure, please see the HMC617LP3(E). Noise Figure: 0.7 dB Output IP3: +36 dBm Gain: 15 dB Externally Adjustable Supply Current Single Positive Supply: +5V 50 Ohm Matched Input/Output Electrical Specifications, T A = +25° C, Vdd = +5V, Rbias = 10 Ohms* Typical Applications The HMC376LP3 / HMC376LP3E is ideal for: • Cellular/3G Infrastructure • Base Stations & Repeaters • CDMA, W-CDMA, & TD-SCDMA • Private Land Mobile Radio • GSM/GPRS & EDGE • UHF Reallocation Applications Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 810 - 960 700 - 1000 MHz Gain 12.5 14.5 11.5 14.5 dB Gain Variation Over Temperature 0.005 0.01 0.005 0.01 dB / °C Noise Figure 0.7 1.0 0.7 1.0 dB Input Return Loss 13 14 dB Output Return Loss 12 12 dB Reverse Isolation 20 22 dB Output Power for 1dB Compression (P1dB) 21.5 21 dBm Saturated Output Power (Psat) 22 22 dBm Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) 36 36 dBm Supply Current (Idd) 73 73 mA *Rbias resistor value sets current, see application circuit herein. |
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