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Outline Drawing

NOTES:

1. ALL DIMENSIONS IN INCHES [MILLIMETERS]

2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS

3. DIE THICKNESS IS 0.004 (0.100)

4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE

5. BACKSIDE METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND

7. BOND PAD METALIZATION: GOLD

Pad Number

Function

Description

Interface Schematic

1

RFIN

This pad is AC coupled and matched to 50 Ohms.

2Vgg2

Gate Control 2 for amplifier. +3V should be applied to

Vgg2 for nominal operation.

3

RFOUT & Vdd

RF output for amplifier. Connect the DC

bias (Vdd) network to provide drain current (Idd).

See application circuit herein.

4Vgg1

Gate Control 1 for amplifier. Adjust between -2 to 0V

to achieve Idd= 290 mA.

Die

Bottom

GND

Die bottom must be connected to RF/DC ground.

Pad Descriptions

HMC464

v04.0308

GaAs PHEMT MMIC

POWER AMPLIFIER, 2 - 20 GHz