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BT301 Datasheet(PDF) 1 Page - BeRex Corporation |
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BT301 Datasheet(HTML) 1 Page - BeRex Corporation |
1 / 17 page 1 500‐4000 MHz High Power Amplifier BT301 OIP3 = 49.0 dBm @ 1900 MHz Gain = 12.5 dB @ 1900 MHz Output P1 dB = 30.3 dBm @ 1900 MHz 50 Ω Cascadable Patented Over Voltage Protec on Circuit Lead‐free/RoHS‐compliant SOIC 8 SMT package BeRex’s BT301 is a high power and a high dynamic range amplifier in a low cost sur‐ face mount package(SOIC‐8) with a RoHS‐ compliant, that incorporates reliable hetero‐ junc on‐bipolar‐transistor (HBT) devices fabricated with InGaP GaAs technology. This device is designed for use where high linearity is required and features high OIP3 and Power with low consump on current (350mA) and requires a few external match‐ ing components such as a DC blocking ca‐ pacitors on the In/Output pin, a bypass ca‐ pacitor and a RF choke for the out port. All devices are 100% RF/DC tested. Product Descrip on Device Features Base sta on Infrastructure/RFID Commercial/Industrial/Military wireless system Applica ons 1 Device performance _ measured on a BeRex evalua on board at 25°C, 50 Ω system. 2 OIP3 _ measured with two tones at an output of 16 dBm per tone separated by 1 MHz. Typical Performance 1 Absolute Maximum Ra ngs BeRex ●website: www.berex.com ● email: sales@berex.com Specifica ons and informa on are subject to change and products may be discon nued without no ce. BeRex is a trademark of BeRex. All other trademarks are the property of their respec ve owners. © 2010 BeRex Parameter Frequency Unit 900 1900 2140 2450 MHz Gain 18.5 12.5 11.5 10.5 dB S11 ‐15.0 ‐18.0 ‐18.0 ‐12.0 dB S22 ‐7.0 ‐12.0 ‐12.0 ‐11.0 dB OIP3 2 49.0 49.0 47.0 49.0 dBm Noise Figure 8.5 8.6 7.5 7.5 dB P1dB 29.5 30.3 30.3 30.3 dBm IS‐95C ACPR 22.5 22.5 ‐ ‐ dBm WCDMA ACLR ‐ ‐ 21.0 21.0 dBm Min. Typical Max. Unit Bandwidth 500 4000 MHz IC @ (Vc = 5V) 310 350 390 mA VC 5.0 V RTH 19.6 °C/W Parameter Unit Opera ng Case Temperature °C Storage Temperature °C Junc on Temperature °C Opera ng Voltage V Input RF Power dBm Supply Current mA Ra ng ‐40 to +85 ‐55 to +155 +220 +6.0 600 28 *Opera on of this device above any of these parameters may result in permanent damage. Applica on Circuits *external matching circuit: refer to the page 4 to 11. Rev. C *ACPR&ACLR CH Power _ measured at 50dBc. *ACPR Test set‐up: IS‐95 CDMA, 9Ch. FWD, +885KHz offset. *ACLR Test set‐up: 3GPP WCDMA, TM1+64DPCH, +5MHz offset. YY = Year, WW = Work week, XX = Wafer Number |
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